View BR25G320F-3_8417157.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

product structure silicon monolithic integrated circuit this product is not designed protection against radioactive ray s 1/ 32 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 14 ? 001 www.rohm.com serial eeprom series standard eeprom spi bus eeprom br25g 32 0-3 general description br 25 g 32 0-3 is a 32 kbit serial eeprom of spi bus interface. features ? high speed clock action up to 20mhz (max) ? wait function by holdb terminal ? part or whole of memory arrays settable as read only memory area by program ? 1.6v to 5.5v single power source operation most suitable for battery use. ? up to 32 bytes in page write mode. ? for spi bus interface (cpol, cpha) = (0, 0), (1, 1) ? self-timed programming cycle ? low current consumption ? at write action (5v) : 0.5ma (typ) ? at read action (5v) : 2.0ma (typ) ? at standby action (5v) : 0.1a (typ) ? address auto increment function at read action ? prevention of write mistake ? write prohibition at power on ? write prohibition by command code (wrdi) ? write prohibition by wpb p in ? write prohibition block setting by status registers (bp1, bp0) ? prevention of write mistake at low voltage ? more than 100 years data retention. ? more than 1 million write cycles. ? bit format 4k 8 ? initia l delivery data memory array: ffh status register: wpen, bp1, bp0 : 0 packages w(typ) x d(typ) x h(max) figure 1. tssop- b8 3.00mm x 6.40mm x 1.20mm sop8 5.00mm x 6.20mm x 1.71mm sop- j8 4.90mm x 6.00mm x 1.65mm msop8 2.90mm x 4.00mm x 0.90mm vson008x2030 2.00mm x 3.00mm x 0.60mm datashee t downloaded from: http:///
datasheet 2/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com absolute maximum ratings (ta= 25 c ) parameter symbol ratings unit remarks supply voltage v cc -0.3 to +6.5 v power dissipation. pd 0.45 (sop8) w when using at ta= 25 c or higher 4.5mw to be reduced per 1 c . 0.45 (sop-j8) wh en using at ta= 25 c or higher 4.5mw to be reduced per 1 c . 0. 33 (tssop-b8) when using at ta= 25 c or higher 3.3mw to be reduced per 1 c . 0. 31 (msop 8) when using at ta= 25 c or higher 3.1mw to be reduced per 1 c . 0. 30 (vson008x2030) when using at ta= 25 c or higher 3.0mw to be reduced per 1 c . storage temperature tstg - 65 to +1 50 c operating temperature topr - 40 to +85 c input voltage / output voltage \ - 0.3 to vcc+1.0 v the max value of input voltage/output voltage is not over 6.5v . when the pulse width is 50ns or less, the min value of input voltage/output voltage is not under -1.0v. junction temperature tjmax 150 c junction temperature at the storage condition electrostatic discharge voltage (human body model) v esd -4000 to +4000 v caution: operating the ic over the absolute maximum ratings may damage t he ic. the damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the ic is operated over the absolute maximum ratings. memory cell characteristics (ta=25 c, vcc=1.6v t o 5.5v) parameter limits unit min typ max write cycles (note1) 1,000,000 - - times data retention (note1) 10 0 - - years (note1) not 100% tested recommended operating ratings parameter symbol ratings unit m in max power source voltage vcc 1.6 5.5 v input voltage v in 0 vcc bypass capacitor c 0.1 - f downloaded from: http:///
datasheet 3/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com dc characteristics (unless otherwise specified, ta=- 40 c to + 85 c, vcc= 1.6 v to 5.5v) parameter symbol limits unit conditions min typ max input high voltage1 v ih 1 0.7 x vcc vcc+1.0 v 1. 7 vcc 5.5v input low voltage1 v il 1 -0.3 (note1) 0.3 x vcc v 1.7 vcc 5.5v input high voltage2 v ih 2 0. 8 x vcc vcc+1.0 v 1.6 vcc<1.7v input low voltage2 v il 2 -0.3 (note1) 0. 2 x vcc v 1.6 vcc<1.7v output low voltage1 v ol 1 0 0.4 v i ol =3.0ma, 2.5 vcc 5.5v output low voltage2 v ol2 0 0.2 v i ol =1.0ma, 1.6 vcc<2.5v output high voltage1 v oh 1 vcc- 0. 2 vcc v i oh =-2.0 ma , 2.5v vcc 5.5v output high voltage2 v oh 2 vcc- 0. 2 vcc v i oh =-4 00 a, 1.6 vcc<2.5v input leakage current i li - 1 1 a v in =0 to vcc output leakage current i lo - 1 1 a v out =0 to vcc, csb=vcc supply current (write) i cc1 1 ma vcc=1.8v, f sck =5mhz, t e/w =5ms byte write, page write, write status register i cc2 1.5 ma vcc=2.5v, f sck =10mhz, t e/w =5ms byte write, page write, write status register i cc3 2 ma vcc=5.5v, f sck =20mhz, t e/w =5ms byte write, page write, write status register supply current (read) i cc4 0.7 ma vcc=1.8v, f sck =5mhz, so=open read, read status register i cc 5 1 ma vcc=2.5v, f sck =5mhz, so=open read, read status register i cc 6 1.6 ma vcc=2.5v, f sck =10mhz, so=open read, read status register i cc 7 3 ma vcc=5.5v, f sck =5mhz, so=open read, read status register i cc 8 4 ma vcc=5.5v, f sck =10mhz, so=open read, read status register i cc 9 8 ma vcc=5.5v, f sck =20mhz, so=open read, read status register standby current i sb 2 a vcc=5.5v, so=open csb=holdb=wpb=vcc, sck=si=vcc or gnd (note1) wh en the pulse width is 50ns or less, it is -1.0v. downloaded from: http:///
datasheet 4/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com ac characteristics (ta=- 40 c to +85c, unless otherwise specified, load capacity c l =30 pf) parameter symbol 1.6 vcc<1.7v 1. 7 vcc<2.5 v 2.5 vcc<4.5v 4 .5 vcc 5.5v unit . m in typ max m in typ max m in typ max m in typ max sck frequency f sck 0.01 - 3 0.01 - 5 0.01 - 10 0.01 - 20 mhz sck h igh time t sckwh 125 - - 80 - - 40 - - 20 - - ns sck low time t sckwl 125 - - 80 - - 40 - - 20 - - ns csb high time t cs 20 0 - - 90 - - 40 - - 20 - - ns csb setup time t css 100 - - 60 - - 30 - - 15 - - ns csb h old time t csh 100 - - 60 - - 30 - - 15 - - ns sck setup time t scks 100 - - 50 - - 20 - - 15 - - ns sck hold time t sckh 100 - - 50 - - 20 - - 15 - - ns si setup time t dis 30 - - 20 - - 10 - - 5 - - ns si hold time t dih 50 - - 20 - - 10 - - 5 - - ns data output delay time t pd - - 125 - - 70 - - 40 - - 20 ns output hold time t oh 0 - - 0 - - 0 - - 0 - - ns output disable time t oz - - 200 - - 80 - - 40 - - 20 ns holdb setting setup time t hfs 0 - - 0 - - 0 - - 0 - - ns holdb setting hold time t hfh 100 - - 20 - - 10 - - 5 - - ns holdb release setup time t hrs 0 - - 0 - - 0 - - 0 - - ns holdb release hold time t hrh 100 - - 20 - - 10 - - 5 - - ns time from holdb to output high-z t hoz - - 100 - - 80 - - 40 - - 20 ns time from holdb to output change t hpd - - 100 - - 80 - - 40 - - 20 ns sck rise time (note1) t rc - - 2 - - 2 - - 2 - - 2 s sck fall time (note1) t fc - - 2 - - 2 - - 2 - - 2 s output rise time (note1) t ro - - 100 - - 50 - - 40 - - 20 ns output fall time (note1) t fo - - 100 - - 50 - - 40 - - 20 ns write cycle time t e/w - - 5 - - 5 - - 5 - - 5 ms (note1) not 100% tested ac timing characteristics conditions parameter sy mbol limits unit m in typ max load capacity c l - - 30 pf input voltage - 0.2vcc/0.8vcc v input / output judgment voltage - 0.3vcc/0.7vcc v input / output capacity (ta=25c , frequency=5mhz) parameter symbol min max unit conditions input capacity (note1) c in 8 pf v in =gnd output capacity (note1) c out 8 v out =gnd (n ote1) not 100% tested serial input / o utpu t timing figure 2-(a) . input timing figure 2-(b) . input / output timing cs b sck si so tcs tcss tscks tsckwl tsckwh tdis tdih trc tfc high-z figure 2-(c) . hold timing si is taken into ic inside in sync with data rise edge o f sck. input address and data from the most significant bit msb so is output in sync with data fall edge of sck. data is output from the most significant bit msb. cs b sck si n+1 "h" "l" n dn n-1 dn dn -1 holdb so dn+1 thfs thfh thoz thrs thrh tdis thpd high-z cs b sck si so tpd toh tro,tfo toz tcsh tsckh tcs high-z downloaded from: http:///
datasheet 5/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com block diagram pin configuration pin descriptions terminal name input /output function vcc - power source to be connected gnd - all input / output reference voltage, 0v cs b input chip select input sck input serial clock input si input ope code, address, and serial data input so output se rial data output holdb input hold input command communications may be suspended temporarily (hold status) wp b input write protect input write status register command is prohibited fi gure 3. block diagram figure 4. pin configuration instruction decode control clock generation voltage detection write inhibition high voltage generator instruction register 32k eeprom address register data register address decoder read/write amp 8bit status register 1 csb 2 so 3 wpb 4 gnd 8 vcc 7 holdb 6 sck 5 si 12bit 8bit 12bit (top view) vcc holdb sck si csb so wpb gnd downloaded from: http:///
datasheet 6/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 7. output low voltage1 vs output current (vcc=2. 5v ) figure 5. input high voltage1,2 vs supply voltage (csb,sck,si,holdb,wpb) figure 6. input low voltage1,2 vs supply voltage (csb,sck,si,holdb,wpb) figure 8. output low voltage2 vs output current (vcc=1.6v) typical performance curves (the following characteristic data are typ values.) 0 1 2 3 4 5 6 0 1 2 3 4 5 6 vcc [v] v ih [v] ta=-40c ta= 25c ta= 85c spec 0 1 2 3 4 5 6 0 1 2 3 4 5 6 vcc [v] v il [v] spec ta=-40c ta= 25c ta= 85c 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 i ol [ma] v ol1 [v] spec ta=-40c ta= 25c ta= 85c 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 i ol [ma] v ol2 [v] spec ta=-40c ta= 25c ta= 85c downloaded from: http:///
datasheet 7/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 12. output leakage current vs supply voltage (so) figure 11 . input leakage current vs supply voltage (csb,sck,si,holdb,wpb) figure 9. output high voltage1 vs output current (vcc=2. 5v ) figure 10 . output high voltage2 vs output current (vcc=1.6v) typical performance curves \ continued 2.2 2.3 2.4 2.5 2.6 0 0.5 1 1.5 2 2.5 i oh [ma] v oh1 [v] spec ta=-40c ta= 25c ta= 85c 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6 vcc [v] i li [ua] spec ta=-40c ta= 25c ta= 85c 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6 vcc [v] i lo [ua] spec ta=-40c ta= 25c ta= 85c 1.3 1.4 1.5 1.6 1.7 0 0.2 0.4 0.6 0.8 1 1.2 i oh [ma] v oh2 [v] spec ta=-40c ta= 25c ta= 85c downloaded from: http:///
datasheet 8/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 13. supply current (write) vs supply voltage (fsck=5mhz) figure 14. supply current (write) vs supply voltage (fsck= 10 mhz) figure 15. supply current (write) vs supply voltage (fsck= 20 mhz) figure 16. supply current (read) vs supply voltage (fsck=5mhz) typical performance curves \ continued 0 1 2 3 4 0 1 2 3 4 5 6 vcc [v] i cc1 [ma] spec ta=-40c ta= 25c ta= 85c 0 2 4 6 8 10 0 1 2 3 4 5 6 vcc [v] i cc4,5,7 [ma] spec ta=-40c ta= 25c ta= 85c spec spec 0 1 2 3 4 0 1 2 3 4 5 6 vcc [v] i cc2 [ma] spec ta=-40c ta= 25c ta= 85c 0 1 2 3 4 0 1 2 3 4 5 6 vcc [v] i cc3 [ma] spec ta=-40c ta= 25c ta= 85c downloaded from: http:///
datasheet 9/ 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 19. standby current vs supply voltage figure 20 . sck frequency vs supply voltage figure 17. supply current (read) vs supply voltage (fsck=10mhz) figure 18. supply current (read) vs supply voltage (fsck= 20 mhz) typical performance curves \ continued 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 vcc [v] i sb [ua] spec ta=-40c ta= 25c ta= 85c 0.1 1 10 100 0 1 2 3 4 5 6 vcc [v] f sck [mhz] spec ta=-40c ta= 25c ta= 85c spec spec spec 0 2 4 6 8 10 0 1 2 3 4 5 6 vcc [v] i cc6,8 [ma] ta=-40c ta= 25c ta= 85c spec spec 0 2 4 6 8 10 0 1 2 3 4 5 6 vcc [v] i cc9 [ma] ta=-40c ta= 25c ta= 85c spec downloaded from: http:///
datasheet 10 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 21 . sck h igh time vs supply voltage figure 22 . sck low time vs supply voltage figure 23 . csb h igh time vs supply voltage figure 24 . csb setup time vs supply voltage typical performance curves \ continued 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 vcc [v] t sckwh [ns] spec spec ta=-40c ta= 25c ta= 85c spec spec 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 vcc [v] t sckwl [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec 0 50 100 150 200 250 0 1 2 3 4 5 6 vcc [v] t cs [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t css [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec downloaded from: http:///
datasheet 11 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 25 . csb h old time vs supply voltage figure 26. si setup time vs supply voltage figure 28. data output delay time vs supply voltage figure 27. si hold time vs supply voltage typical performance curves \ continued 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t csh [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 vcc [v] t pd [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 10 20 30 40 50 0 1 2 3 4 5 6 vcc [v] t dis [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c -10 0 10 20 30 40 50 60 0 1 2 3 4 5 6 vcc [v] t dih [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec downloaded from: http:///
datasheet 12 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 29. output disable time vs supply voltage figure 30. holdb setting hold time vs supply voltage figure 31. holdb release hold time vs supply voltage figure 32. time from holdb to output high-z vs supply voltage typical performance curves \ continued 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t hfh [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 50 100 150 200 250 0 1 2 3 4 5 6 vcc [v] t oz [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t hrh [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t hoz [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c downloaded from: http:///
datasheet 13 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com figure 33 . time from holdb to output change vs supply voltage figure 34. output rise time vs supply voltage figure 36. write cycle time vs supply voltage figure 35. output fall time vs supply voltage typical performance curves \ continued 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t hpd [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t ro [ns] spec spec spec spec ta=-40c ta= 25c ta= 85c 0 20 40 60 80 100 120 0 1 2 3 4 5 6 vcc [v] t fo [ns] spec ta=-40c ta= 25c ta= 85c spec spec spec 0 1 2 3 4 5 6 0 1 2 3 4 5 6 vcc [v] t e/w [ms] ta=-40c ta= 25c ta= 85c spec downloaded from: http:///
datasheet 14 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com features 1. status registers this ic has status register. the status register expresses the follo wing parameters of 8 bits. bp0 and bp1 can be set by write status register command. these 2 bits are memorized into the eeprom, therefore are valid even when power source is turned off. rewrite characteristics and data hold time are same as characterist ics of the eeprom. wen can be set by write enable command and write disable command. wen becomes write disable status when power source is turned off. r/b is for write confirmation, therefore canno t be set externally. the value of status register can be read by read status registe r command. (1) contexture of status register bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 wpen 0 0 0 bp1 bp0 wen r D /b b it memory location function wpen eeprom wp b pin enable / disable designation bit wpen=0=invalid wpen=1=valid bp1 bp0 eeprom eeprom write disable block designation bit wen registers write and write status register write enable / disable status confir mation bit wen=0=prohibited wen=1=permitted r D /b registers write cycle status (ready / busy) status confirmation bit r D /b=0=ready r D /b=1=busy (2) write disable block setting bp1 bp0 write disable block 0 0 none 0 1 c0 0h -fffh 1 0 80 0h -fffh 1 1 00 0h -fffh 2. wp b p in by settin g wp b=low, write command is prohibited. and the write command to be d isabled at this moment is wrsr. however, when write cycle is in execution, no interruption can be made. wrsr write prohibition possible but wpen bit 1 prohibition impossible 3. holdb p in by holdb pin, data transfer can be interrupted. when sck= 0 , by making holdb from 1 into 0 , data transfer to eeprom is interrupted. when sck = 0 , by making holdb from 0 into 1 , data transfer is restarted. downloaded from: http:///
datasheet 15 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com command m ode command contents ope code wren write enable command 0000 0110 wrdi write disable command 0000 0100 read read command 0000 0011 write write command 0000 0010 rdsr read status register command 0000 0101 wrsr write status register command 0000 0001 timing chart 1. write enable (wren) / disable (wrdi) command this ic has write enable status and write disable status. it i s set to write enable status by write enable command, and i t is set to write disable status by write disable command. as for these commands, set csb low, and then input the respective op e codes. the respective commands are accepted at the 7-th c lock rise. even with input over 7 clocks, command becomes valid. when to carry out write command, it is necessary to set write e nable status by the write enable command. if write command is input in the write disable status, the command is cancelled. and even in the write enable status, once write command is executed, it gets in the write disable status. after pow er on, this ic is in write disable status. 2. read command (read) by read command, data of eeprom can be read. as for this command, set csb low , then input address after read ope code. eeprom starts data output of the designated address. da ta output is started from sck fall of 23-th clock, and from d7 to d0 sequentially. this ic has increment read function . after output of data for 1 byte (8bits), by continuing input of sck, data of the next address can be read. increment read can read all the addresses of eeprom. after reading data of the most significant address, by continuing increment rea d, data of the most insignificant address is read. wren (write enable ): write enable figure 37. write enable command high-z 6 0 3 7 1 2 4 5 csb sck so si 0 0 0 0 0 1 1 0 figure 38. write disable command wrdi (write disable): write disable high-z 0 0 0 0 si 0 1 0 0 0 3 1 2 4 7 csb sck 5 6 so figure 39. read command high-z 11 1 1 0 0 3 7 1 2 d6 so cs b sck si 4 5 a12 0 6 8 * a0 a1 d7 23 30 24 d0 0 0 0 0 0 d2 d1 9 10 31 * * downloaded from: http:///
datasheet 16 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com 3. write command (write) by write command, data of eeprom can be written. as for this comma nd, set csb low, then input address and data after write ope code. then, by making csb high, the eeprom starts writi ng. the write time of eeprom requires time of t e/w (max 5ms). during t e/w , other than read status register command is not accepted. se t csb high between taking the last data (d0) and rising the next sck clock. at the other ti ming, write command is not executed, and this write command is cancelled. this ic has page write function, and after input of data for 1 byte (8 bits), by continuing dat a input without setting csb high, 2byte or more data can be written for one t e/w . up to 32 arbitrary bytes can be written. in page write, the insignificant 5 bit of the designated address is incremented internally at every time when data of 1 byte is input and data is written to respective addresses. when data o f the maximum bytes or higher is input, address rolls ove r, and previously input data is overwritten. 4. write status register, read status register command (wrsr/rdsr) write status register command can write data of status regi ster. the data can be written by this command are 3 bits , that is, wpen (bit7), bp1 (bit3) and bp0 (bit2) among 8 bits of status register. by bp1 and bp0, write disable block of eeprom can be set. as for this command, set csb low, and input ope code of write status register, and input data. then, by making csb high, eeprom starts writing. write time requires time of t e/w as same as write. as for csb rise, set csb high between taking the last data bit (bit0) and the n ext sck clock rising. at the other timing, command is cancelled. write disable block is determined by bp1 bp0, an d the block can be selected from 1/ 4, 1/2, and entire of memory array (refer to the write disable block setting table.). to the write disabled block, write cannot be made, and only read can be made. figure 40 . write command cs b sck hi gh -z *=don't care 0 0 0 0 1 wpen 0 1 2 4 0 si so 0 3 7 8 5 6 * 9 10 11 12 13 14 15 * * bp1 bp0 * * bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 0 figure 41 . write status register figure 42 . read status register command high-z bit7 bit6 bit5 bit4 0 0 0 bit3 bit2 bit1 bit0 13 cs b sck si 1 1 10 6 0 so 14 1 2 wen r/b 11 15 3 7 9 0 5 12 0 0 0 0 0 4 8 wpen bp1 bp0 high-z =don't care 31 d0 0 0 0 0 0 d2 d1 d7 23 30 24 d6 0 a0 a1 * 1 1 2 4 0 cs b sck si so 0 3 7 8 5 6 a1 2 11 9 10 * * downloaded from: http:///
datasheet 17 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com wp b cancel valid area wp b is normally fixed to h or l for use, but when wp b is controlled so as to cancel write status register comm and, pay attention to the following wp b valid timing. while write status register command is executed, by setting wp b = l in cancel valid area, command can be cancelled. the area from command ope code to csb rise at internal automati c write start becomes the cancel valid area. however, once write is started, by any input write cycle cannot be cancelled. wp b input becomes don t care, and cancellation becomes invalid. hold b p in by holdb pin, command communication can be stopped tempora rily (hold status). the command communications are carried out when the holdb pin is high. to get in hold status, at c ommand communication, when sck=low, set the holdb pin low. at hold status, sck and si become don t care, and so becomes high impedance (high-z). to release the hold status, set the holdb pin high when sck=low. after that, comm unication can be restarted from the point before the hold status. for example, when hold status is made a fter a5 address input at read, after release of hold status, by starting a4 address input, read can be restarted . when in hold status, keep csb low. when it is set csb=high in hold status, the ic is reset, therefore communication after that ca nnot be restarted. figure 43 . wp b valid timing (at inputting wrsr command) 6 7 ope code data te/w data write time sck 15 16 invalid valid invalid downloaded from: http:///
datasheet 18 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com method to cancel each command 1. read, rdsr ? method to cancel : cancel by csb = h . 2. write , page write a ope code or address input area cancellation is available by cs b =h . b data input area (d7 to d1 input area) cancellation is available by cs b =h . c data input area (d0 area) in this area, cancellation is not available. when csb is set high, write starts. d t e/w area in the area c, by rising csb, write starts. while writing, by any input, cancellation cannot be mad e. note1) if vcc is made off during write execution, designated address data is not guaranteed, therefore write it once again. note2) if csb is rised at the same timing as that of the sck rise, write exec ution / cancel becomes unstable, therefore, it is recommended to rise in sck = l area. as for sck rise, assure timing of t css / t csh or more. 3. wrsr a from ope code to 15-th clock rise cancellation is available by csb= h . b from 15-th clock rise to 16-th clock rise (write enable area) in this area, cancellation is not available by csb= h . when csb is set high, write starts using csb. c after 16-th clock rise. cancellation is available by cs b =h . however, if write starts (csb is rised) in the area b, cancellation cannot be made by any means. and, by inputting on sck clock, cancellation cannot be made. note1) if vcc is made off during write execution, designated address data is n ot guaranteed, therefore write it once again note2) if csb is rised at the same timing as that of the sck rise, write exec ution / cancel becomes unstable, therefore, it is recommended to rise in sck = l area. as for sck rise, assure timing of t css / t csh or more. 4. wren/wrdi a from ope code to 7-th clock rise, cancellation is available by csb = h . b cancellation is not available 7-th clock. figure 44 . read cancel valid timing figure 45 . rdsr cancel valid timing figure 48. wren/wrdi cancel valid timing ope code address a data t e/w b d c 8bits 8bits 16 bits d7 b d6 d5 d4 d3 d2 d1 d0 sck si c figure 47. wrsr cancel valid timing ope code address cancel available in all areas of read mode data 8 bits 8 bits 16 bits ope code cancel available in all areas of rdsr mode data 8 bits 8 bits ope code data t e/w 8 bits 14 15 16 17 d1 d0 a b c 8 bits a b c sck si ope code 8 bits 6 7 8 a b sck figure 46 . write cancel valid timing downloaded from: http:///
datasheet 19 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com i/o peripheral circuits in order to realize stable high speed operations, pay attention to the following input / output pin conditions. input pin pull up, pull down resistance when to attach pull up, pull down resistance to eeprom inpu t pin, select an appropriate value for the microcontroller v ol , i ol with considering v il characteristics of this ic. 1. pull u p resistance and, in order to prevent malfunction or erroneous write at power on/off, be su re to make csb pull up. 2. pull down resistance further, by amplitude v ihe , v ile of signal input to eeprom, operation speed changes. by inpu tting vcc/gnd level amplitude of signal, more stable high speed operations can be realized. on the contrary, when amplitude of 0.8v cc / 0.2vcc is input, operation speed becomes slow. (note1) in order to realize more stable high speed operation, it i s recommended to make the values of r pu , r pd as large as possible, and make the amplitude of signal input to eeprom close t o the amplitude of v cc / gnd level. (note1) in this case, guaranteed value of operating timing is guarant eed. 3. so load capacity condition load capacity of so output pin affects upon delay character istic of so output (data output delay time, time from holdb to high-z, output rise time, output fall time.). in order to make o utput delay characteristic into better, make so load capacity small. 4. other cautions make the each wire length from the microcontroller to eeprom inp ut pin same length, in order to prevent setup / hold violation to eeprom, owing to difference of wire length of each input. eeprom so c l figure 51 . so load capacity figure 49. pull up resistance figure 50 . pull down resistance ??? ??? example) when v cc =5v , v o hm =v cc -0.5v, i ohm 0.4ma , v ih e =v cc 0.7v, from the equation , ??? ??? with the value of rpu to satisfy the above equation, v olm becomes 0.4v or lower, and with v ile (=1.5v), the equation is also satisfied. ? v il e :eep ro m v il specifications ? v olm :microcontroller v ol specifications ? i olm :microcontroller i ol specifications example) when vcc=5v, v ile =1.5v, v olm =0.4v, i olm =2ma, from the equation , i olm v ile v olm l output l input microcontroller eeprom r pu i ohm v ihe v ohm microcontroller eeprom h output h input r pd ile olm olm olm cc pu v v i v v r ? ? ? ihe ohm ohm ohm pd v v i v r ? ? ] [3.2 10 2 4.0 5 3 ? k r r pu pu ? ? ? ? \ \ ] [3. 11 10 4.0 5.0 5 3 ? k r r pd pd ? ? ? \ \ downloaded from: http:///
datasheet 20 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com i/o equivalen ce circuit 1. output circuit 2. input circuit figure 56. holdb input equivalent circuit figure 57. wp b input equivalent circuit figure 52 . so output equivalent circuit figure 53 . cs b input equivalent circuit figure 54 . sck input equivalent circuit figure 55 . si input equivalent circuit so internal signal internal signal csb internal signal internal signal sck internal signal si internal signal holdb internal signal wpb internal signal downloaded from: http:///
datasheet 21 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com power-up/down conditions 1. at standby set csb h , and be sure to set sck, si input l or h . do not input intermediate electric potantial. 2. at power on/off when vcc rise or fall, set csb= h (=vcc). when csb is l , this ic gets in input accept status (active). if power is tu rned on in this status, noises and the likes may cause malfunction, erroneous write or so. to prevent these, at power on, set csb h . (when csb is in h status, all inputs are canceled.) (good example) csb terminal is pulled up to vcc. at power off, take 10ms or more before supply. if power is tu rned on without observing this condition, the ic internal circuit may not be reset. ( ba d example) cs b terminal is l at power on/off. in this case, csb always becomes l (active status), and eeprom may have malfunction or erroneous write owing to noises and the likes. even when csb input is high-z, the status becomes like this case. 3. operating timing after power on as shown in figure 59, at standby, when sck is h , even if csb is fallen, si status is not read at fall edge. si status is read at sck rise edge after fall of csb . at standby and at power on/off, set csb h status. 4. at power on malfunction preventing function this ic has a por (power on reset) circuit as mistake write counte rmeasure. after por action, it gets in write disable status. the por circuit is valid only when power is on, and does not work when power is off. when power is on, if the recommended conditions of the following t r , t off , and v bot are not satisfied, it may become write enable status owi ng to noises and the likes. recommended conditions of t r , t off , v bot t r t off v bot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below 5. low voltage malfunction preventing function lvcc (vcc-lockout) circuit prevents data rewrite action at low powe r, and prevents wrong write. at lvcc voltage (typ = 1.2v) or below, it prevent data rewrite. t r t off vbot 0 vcc figure 58. csb timing at power on/off cs b vcc bad example good example figure 60 . rise waveform figure 59. operating timing 0 1 2 command start here. si is read. even if csb is fallen at sck= h , si status is not read at that edge. csb sck si downloaded from: http:///
datasheet 22 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com noise countermeasures 1. vcc noise (bypass capacitor) when noise or surge gets in the power source line, mal function may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1f) between ic vcc and gnd. at that time, attach it as close to ic as possible. and, it is also recommended to attach a bypass capacitor between board vcc and gnd. 2. sck noise when the rise time of sck (t rc ) is long, and a certain degree or more of noise exists , malfunction may occur owing to clock bit displacement. to avoid this, a schmitt trigger circu it is built in sck input. the hysteresis width of this circuit is set about 0.2v, if noises exist at sck input, set the noise amplitud e 0.2vp-p or below. and it is recommended to set the rise time of sck (t rc ) 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise countermeasures. make the clock rise, fall time as small as possi ble. 3. wp b noise during execution of write status register command, if there exi st noises on wp b pin, mistake in recognition may occur and forcible cancellation may result. to avoid this, a sc hmitt trigger circuit is built in wp b input. in the same manner, a schmitt trigger circuit is built in csb input, si input and holdb input too . downloaded from: http:///
datasheet 23 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com operational notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse polarity when connecting the power supply, such as mounting an extern al diode between the power supply and the ic s power supply pin s. 2. power supply lines design the pcb layout pattern to provide low impedance supply lines. separate the ground and supply lines of the digital and analog blocks to prevent noise in the groun d and supply lines of the digital block from affecting t he analog block. furthermore, connect a capacitor to ground at all power s upply pins . consider the effect of temperature and aging on the capacitance value when using electrolytic capa citors. 3. ground voltage ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. ground wiring pattern when using both small-signal and large-current ground tra ces, the two ground traces should be routed separately but connected to a single ground at the reference point of the a pplication board to avoid fluctuations in the small-sign al ground caused by large currents. also ensure that the ground traces of external components do not cause variations on the ground voltage. the ground lines must be as short and thick as possible to reduce line impedance. 5. thermal consideration should by any chance the power dissipation rating be ex ceeded the rise in temperature of the chip may result i n deterioration of the properties of the chip. the absolute maximum rating of the pd stated in this specification is w hen the ic is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. in case of exceeding this absolute maximum rating, increase the board size and copper area to prevent excee ding the pd rating. 6. recommended operating conditions these conditions represent a range within which the expec ted characteristics of the ic can be approximately obtained . the electrical characteristics are guaranteed under the condi tions of each parameter. 7. inrush current when power is first supplied to the ic, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and dela ys, especially if the ic has more than one power supply. therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field m ay cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connecting a capacitor directly to a low-impedance output pin may subject the ic to stress. always discharge capacit ors completely after each process or step. the ics powe r supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground t he ic during assembly and use similar precautions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounti ng the ic on the pcb. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each o ther especially to ground, power supply and output pin . inter-pin shorts could be due to many reasons such as metal parti cles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during as sembly to name a few. downloaded from: http:///
datasheet 24 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com operational notes C continued 11. unused input pins input pin s of an ic are often connected to the gate of a mos transistor . the gate has extremely high impedance and extremely low capacitance. if left unconnected, the elec tric field from the outside can easily charge it. the sma ll charge acquired in this way is enough to produce a signi ficant effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise spec ified, unused input pins should be connected to the power supply or ground line. 12. regarding the input pin of the ic in the construction of this ic, p-n junctions are inevitably formed creating parasitic diodes or transistors. the operation of these parasitic elements can result in mutua l interference among circuits, operational faults, or physica l damage. therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower than the ground voltage should be avoide d. furthermore, do not apply a voltage to the input pins whe n no power supply voltage is applied to the ic. even if the power suppl y voltage is applied, make sure that the input pin s have voltages within the values specified in the electrical chara cteristics of this ic. downloaded from: http:///
datasheet 25 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com ordering information b r 2 5 g 3 2 0 x x x - 3 x x x lineup capacity package orderable part number type quanti ty 32 k sop8 reel of 25 00 br25g 32 0f -3ge2 sop-j8 br25g 32 0fj -3ge2 tssop- b8 reel of 3000 br25g 32 0fvt -3ge2 msop8 br25g 32 0fvm -3g tr vson008x2030 reel of 40 00 br25g 32 0 nux -3 tr bus type 25 spi operating temperature/voltage - 40 c to +85c / 1. 6v to 5.5v process code packaging and forming specification e2 : embossed tape and reel (sop8, sop-j8, tssop- b8 ) tr : embossed tape and reel (msop8, vson008x2030) capacity 32 0 = 32 k g : halogen free blank : halogen free package f : sop8 fvm : msop8 fj : sop- j8 nux : vson008x2030 fvt : tssop- b8 downloaded from: http:///
datasheet 26 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com physical dimension, tape and reel information package name sop8 (unit : mm) pkg : sop8 drawing no. : ex112-5001-1 (max 5.35 (include.burr)) downloaded from: http:///
datasheet 27 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com physical dimension, tape and reel information package name sop-j8 downloaded from: http:///
datasheet 28 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com physical dimension, tape and reel information package name tssop- b8 downloaded from: http:///
datasheet 29 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com physical dimension, tape and reel information package name msop8 downloaded from: http:///
datasheet 30 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com physical dimension, tape and reel information package name vson008x2030 downloaded from: http:///
datasheet 31 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com marking diagrams sop8(top view) 5g32 part number marking lot number 1pin mark sop-j8(top view) 5g32 part number marking lot number 1pin mark tssop-b8(top view) 5g32 part number marking lot number 1pin mark msop8(top view) 5g f part number marking lot number 1pin mark vson008x2030 (top view) 2 part number marking lot number 1pin mark 5g 3 downloaded from: http:///
datasheet 32 / 32 br25g 32 0-3 tsz02201-0r2r0g100 71 0-1-2 18.dec.2014 rev.001 ? 2014 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 www.rohm.com revision history date revision changes 18 .dec.2014 001 new release downloaded from: http:///
notice-p ga -e rev.003 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufactured for application in ordinary electronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). if you intend to use our products in devices requiring extremely h igh reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecraft, nuclear powe r controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property ( specific applications ), please consult with the rohm sales representative in adv ance. unless otherwise agreed in writing by rohm in advance, rohm s hall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arisin g from the use of any rohm s products for specific applications. (note1) medical equipment classification of the specific appl ications japan usa eu china class class class b class class class 2. rohm designs and manufactures its products subject to stri ct quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequ ate safety measures including but not limited to fail-safe desig n against the physical injury, damage to any property, whic h a failure or malfunction of our products may cause. the followi ng are examples of safety measures: [a] installation of protection circuits or other protective devic es to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified be low. accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from th e use of any rohms products under any special or extraordinary environments or conditions. if yo u intend to use our products under any special or extraordinary environments or conditions (as exemplified belo w), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be n ecessary: [a] use of our products in any types of liquid, including water, oils, chemicals, and organi c solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products are e xposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed t o static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing component s, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subject to radiation-proof design. 5. please verify and confirm characteristics of the final or mou nted products in using the products. 6 . in particular, if a transient load (a large amount of load appl ied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mou nting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating u nder steady-state loading condition may negatively affec t product performance and reliability. 7 . de -rate power dissipation depending on ambient temperature. wh en used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range desc ribed in the product specification. 9 . rohm shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc .) flux is used, the residue of flux may negatively affect prod uct performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mus t be used on a through hole mount products. i f the flow soldering method is preferred on a surface-mount p roducts , please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
notice-p ga -e rev.003 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, p lease allow a sufficient margin considering variations o f the characteristics of the products and external components, inc luding transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and a ssociated data and information contained in this docum ent are presented only as guidance for products use. therefore, i n case you use such information, you are solely responsible for it and you must exercise your own independ ent verification and judgment in the use of such information contained in this document. rohm shall not be in any way respon sible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such informat ion. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take pr oper caution in your manufacturing process and storage so t hat voltage exceeding the products maximum rating will not be applied to products. please take special care under dry co ndition (e.g. grounding of human body / equipment / solder iro n, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate i f the products are stored in the places where: [a] the products are exposed to sea winds or corrosive gases, in cluding cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderabil ity of products out of recommended storage time period may be degraded. it is strongly recommended to confirm so lderability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indi cated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a c arton. 4. use products within the specified time after opening a humi dity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage tim e period. precaution for product label a two-dimensional barcode printed on rohm products label is f or rohm s internal use only. precaution for disposition when disposing products please dispose them properly usi ng an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to appl ication example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, a ctions or demands arising from the combination of the products with other articles such as components, circuits, systems or ex ternal equipment (including software). 3. no license, expressly or implied, is granted hereby under any inte llectual property rights or other rights of rohm or any third parties with respect to the products or the information contai ned in this document. provided, however, that rohm will not assert it s intellectual property rights or other rights against you or you r customers to the extent necessary to manufacture or sell products containing the products, subject to th e terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any way whatsoever the pr oducts and the related technical information contained in the products or this document for any military purposes, includi ng but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
datasheet datasheet notice ? we rev.001 ? 2015 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:///

▲Up To Search▲

Price & Availability of BR25G320F-3

	To Download BR25G320F-3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .